Mainstream　high-k　gate　materials,　such　as　SiO2,　Al2O3,　and　HfZrO2,　are　in　demand　for　modern　electronics.　However,　these　dielectrics　possess　lower　thermal　conductivity,　significantly　limiting　thermal　dissipation　in　electronic　devices.　Herein,　we　propose　the　utilization　of　complementary　metal-oxide　semiconductor-　(CMOS)　compatible　high　power　impulse　magnetron　sputtering　(HiPIMS)　for　the　mass　production　of　highly　textured　hexagonal　boron　nitride　(h-BN)　on　(100)-,　(110)-,　and　(111)-oriented　SrTiO3　substrates.　The　as-prepared　films　exhibit　distinct　vertical　alignments,　as　evidenced　by　HRTEM　and　FTIR　analysis.　Notably,　the　R　value,　ranging　from　0.46　to　0.50,　is　associated　with　the　stress　in　the　film.　Importantly,　distinct　anisotropies　in　thermal　conductivity,　dielectric　constant,　and　optical　band　gap　are　observed.　Furthermore,　the　values　of　thermal　conductivity　in　these　highly　textured　h-BN　films　are　4.5,　5.7,　and　5.3　Wm-　1K-1,　which　is　almost　three　times　larger　than　those　of　SiO2　(1.4　Wm-　1K-1)　and　Al2O3　(1.35　Wm-　1K-1),　and　even　an　order　of　magnitude　larger　than　that　of　HfZrO2　(0.67　Wm-　1K-1).　The　combination　of　excellent　dielectric　characteristics,　favorable　thermal　conductivity,　and　superior　stability　over　a　broad　temperature　range　makes　this　novel　material　outperform　conventional　dielectric　gate　materials　in　high-power　electronics　applications.