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author:

Lin, Lihua (Lin, Lihua.) [1] (Scholars:林立华) | Ye, Xiaoxue (Ye, Xiaoxue.) [2] | Luo, Zhiqi (Luo, Zhiqi.) [3] | Chen, Weiguo (Chen, Weiguo.) [4] (Scholars:陈伟国) | Guo, Tailiang (Guo, Tailiang.) [5] (Scholars:郭太良) | Hu, Hailong (Hu, Hailong.) [6] (Scholars:胡海龙) | Li, Fushan (Li, Fushan.) [7] (Scholars:李福山)

Indexed by:

EI Scopus SCIE

Abstract:

Quantum dot light-emitting diodes (QLEDs) are emerging as promising candidates for next-generation displays, with the current efficiency and stability of both red and green QLEDs meeting display requirements. However, the efficiency and stability of blue QLEDs, particularly pure blue iterations, significantly lag behind those of their red and green counterparts, thus hindering the widespread adoption of full-color QLEDs. Here, we introduce a strategy to improve the efficiency and stability of pure blue zinc selenide (ZnSe) QLEDs by adding a new ionic liquid (IL) salt, 1-butyl-3-methylimidazolium phosphorus hexafluoride (BMIMPF6), into the hole transport layer (HTL). This IL salt acts as an effective p-dopant, enhancing charge mobility while also increasing the surface potentials of the HTL for better alignment of energy bands at the interface. This results in a significant improvement in device performance, with the external quantum efficiency (EQE) increasing from 4.90% to 7.02%, setting a high performance for cadmium-free pure-blue ZnSe QLEDs. Additionally, the device's operational lifetime, measured as the time taken for luminance to drop to 50% (T-50) at 100 cd m(-2), sees a remarkable six-fold increase, reaching 177 hours. Our work represents a significant advancement in developing cadmium-free pure-blue ZnSe QLEDs and offers valuable insights for designing efficient and stable quantum dot-based displays.

Keyword:

Community:

  • [ 1 ] [Lin, Lihua]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350002, Peoples R China
  • [ 2 ] [Ye, Xiaoxue]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350002, Peoples R China
  • [ 3 ] [Luo, Zhiqi]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350002, Peoples R China
  • [ 4 ] [Chen, Weiguo]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350002, Peoples R China
  • [ 5 ] [Guo, Tailiang]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350002, Peoples R China
  • [ 6 ] [Hu, Hailong]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350002, Peoples R China
  • [ 7 ] [Li, Fushan]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350002, Peoples R China
  • [ 8 ] [Lin, Lihua]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Peoples R China
  • [ 9 ] [Guo, Tailiang]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Peoples R China
  • [ 10 ] [Hu, Hailong]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Peoples R China
  • [ 11 ] [Li, Fushan]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Peoples R China

Reprint 's Address:

  • [Li, Fushan]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350002, Peoples R China;;[Li, Fushan]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Peoples R China;;

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Source :

JOURNAL OF MATERIALS CHEMISTRY C

ISSN: 2050-7526

Year: 2024

Issue: 28

Volume: 12

Page: 10408-10416

5 . 7 0 0

JCR@2023

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 3

SCOPUS Cited Count: 2

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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