Non-destructive　and　accurate　inspection　of　gallium　nitride　light-emitting　diode　(GaN-LED)　epitaxial　wafers　is　important　to　GaN-LED　technology.　However,　the　conventional　electroluminescence　inspection,　the　photoluminescence　inspection,　and　the　automated　optical　inspection　cannot　fulfill　the　complex　technical　requirements.　In　this　work,　an　inspection　method　and　an　operation　system　based　on　soft　single-contact　operation,　namely,　single-contact　electroluminescence　(SC-EL)　inspection,　are　proposed.　The　key　component　of　the　SC-EL　inspection　system　is　a　soft　conductive　probe　with　an　optical　fiber　inside,　and　an　AC　voltage　(70Vpp　,　pp　,　100　kHz)　is　applied　between　the　probe　and　the　ITO　electrode　under　the　LED　epitaxial　wafer.　The　proposed　SC-EL　inspection　can　measure　both　the　electrical　and　optical　parameters　of　the　LED　epitaxial　wafer　at　the　same　time,　while　not　causing　mechanical　damage　to　the　LED　epitaxial　wafer.　Moreover,　it　is　demonstrated　that　the　SC-EL　inspection　has　a　higher　electroluminescence　wavelength　accuracy　than　photoluminescence　inspection.　The　results　show　that　the　non-uniformity　of　SC-EL　inspection　is　444.64%,　which　is　much　lower　than　that　of　photoluminescence　inspection.　In　addition,　the　obtained　electrical　parameters　from　SC-EL　can　reflect　the　reverse　leakage　current　(Is)　s　)　level　of　the　LED　epitaxial　wafer.　The　proposed　SC-EL　inspection　can　ensure　high　inspection　accuracy　without　causing　damage　to　the　LED　epitaxial　wafer,　which　holds　promising　application　in　LED　technology.　(c)　2024　Chinese　Laser　Press