In　this　paper,　an　AlGaInP-based　red　Micro-LED　display　measured　17.78　mm　(0.7　in),　with　a　resolution　of　1920　x　1080,　a　light-emitting　mesa　size　of　6　mu　m,　a　pixel　pitch　of　8　mu　m　and　a　pixel　density　of　3175　PPI　was　designed　and　fabricated　with　a　CMOS　driver　backplane.　The　metal　bump　preparation　technology　of　the　complementary　metal-oxide　semiconductor　driver　backplane　was　optimized　to　enhance　the　bonding　yield　and　create　an　optimal　display　effect.　Improper　sizing　of　the　etched　window　in　the　SiO2　insulation　and　passivation　layer　can　have　a　detrimental　impact　on　the　metal　bump　preparation　and　subsequent　bonding　process.　By　optimizing　the　settings　of　lithography　and　dry　etching,　the　appropriate　size　of　the　etched　aperture　in　the　passivation　layer　was　achieved.　The　high　density,　small　size,　and　large　aspect　ratio　of　the　photoresist　openings　for　the　bump　fabrication　made　it　challenging　to　remove　the　photoresist　following　the　metal　evaporation.　To　successfully　remove　the　photoresist,　it　is　important　to　carefully　choose　suitable　experimental　conditions　for　the　removal.　Afterwards,　an　8　mu　m　AlGaInP-based　red　Micro-LED　display　was　effectively　integrated　with　complementary　metal-oxide　semiconductor　using　flip-chip　bonding　technology.　This　work　may　be　of　reference　value　to　those　who　work　on　ultrahigh　density　red　Micro-LEDs　that　is　challenging　but　crucial　for　future　full　color　micro　displays.