Indium　(In)　is　currently　used　to　fabricate　metal　bumps　on　micro-light-emitting　diode　(Micro-LED)　chips　due　to　its　excellent　physical　properties.　However,　as　Micro-LED　pixel　size　and　pitch　decrease,　achieving　high-quality　In　bumps　on　densely　packed　Micro-LED　chips　often　presents　more　challenges.　This　paper　describes　the　process　of　fabricating　In　bumps　on　micro-LEDs　using　thermal　evaporation,　highlighting　an　issue　where　In　tends　to　grow　laterally　within　the　photoresist　pattern,　ultimately　blocking　the　pattern　and　resulting　in　undersized　and　poorly　dense　In　bumps　on　the　Micro-LED　chip.　To　address　this　issue,　we　conducted　numerous　experiments　to　study　the　height　variation　of　In　bumps　within　a　range　of　photoresist　aperture　sizes　(3　mu　m　-7　mu　m)　under　two　different　resist　thickness　conditions　(3.8　mu　m　and　4.8　mu　m).　The　results　showed　that　the　resist　thickness　had　a　certain　effect　on　the　height　of　In　bumps　on　the　Micro-LED　chip　electrodes.　Moreover,　we　found　that,　with　the　photoresist　pattern　size　increasing　under　constant　resist　thickness　conditions,　the　height　and　quality　of　the　bumps　significantly　improved.　Based　on　this　finding,　we　rationalized　the　adjustment　of　the　photoresist　pattern　size　within　a　limited　emission　platform　range　to　compensate　for　the　height　difference　of　In　bumps　caused　by　different　resist　thicknesses　between　the　cathode　and　anode　regions.　Consequently,　well-shaped　and　dense　In　bumps　with　a　maximum　height　of　up　to　4.4　mu　m　were　fabricated　on　8　mu　m　pitch　Micro-LED　chips.　Afterwards,　we　bonded　the　Micro-LED　chip　with　indium　bumps　to　the　CMOS　chip,　and　we　found　that　we　could　successfully　control　the　CMOS　chip　to　drive　the　Micro-LED　chip　to　display　specific　characters　through　the　Flexible　Printed　Circuit　(FPC).　This　work　is　of　significant　importance　for　the　fabrication　of　In　bumps　on　Micro-LED　chips　with　pitches　below　10　mu　m　and　subsequent　bonding　processes.