Magnetic　random-access　memory　(MRAM)-based　computing-in-memory　(CIM)　schemes　can　be　divided　into　write-based　CIM　and　read-based　CIM.　Compared　with　read-based　CIM,　the　write-based　CIM　can　perform　more　operations　such　as　AND,　OR,　majority　(MAJ)　gate,　and　full　adder　(FA).　However,　write-based　CIM　schemes　require　a　large　number　of　memory　cells　and　multiple　processing　cycles.　In　this　paper,　we　proposed　a　compact　write-based　CIM　scheme　by　using　a　one　transistor　one　high-speed　switch　magnetic　tunnel　junction　(1T-1HSS-MTJ)　memory　cell　to　implement　NAND,　NOR,　XOR,　and　MAJ　gates　within　two　write　cycles　and　one　read　cycle.　Moreover,　we　also　demonstrated　that　FA　operation　can　also　be　performed　using　three　1T-1HSS-MTJ　cells　within　six　cycles.　According　to　the　simulation　results　performed　using　the　SMIC　40　nm　CMOS　process　and　the　HSS-MTJ　SPICE　model,　we　have　demonstrated　that　these　logic　functions　can　be　achieved.　When　compared　to　the　write-based　CIM　using　SOT-MRAM,　the　proposed　CIM　requires　fewer　cells　and　shorter　latency　to　achieve　the　same　logic　operations.