Non-volatile　memory　(NVM)　devices　using　graphene　quantum　dots　(GQDs)　as　charge　trapping　sites　were　fabricated　with　silver　nanowires　as　top　electrodes　using　solution　process.　The　stacking　structure　consists　of　GQDs　embedded　between　polymethylsilsesquioxane　layers　constructed　on　transparent　flexible　substrate.　Hysteresis　window　was　observed　in　the　current-voltage　plots,　and　the　NVM　devices　are　reprogrammable　and　stable　up　to　1　x　10(4)　s　with　a　distinct　ON/OFF　ratio　of　10(4).　In　addition,　the　memory　device　shows　the　stable　hysteresis　window　without　obvious　degradation　upon　bending　under　different　curvature　radii.