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author:

Zhu, Qiqiang (Zhu, Qiqiang.) [1] | Wang, Weihuang (Wang, Weihuang.) [2] (Scholars:王伟煌) | Chen, Zhirong (Chen, Zhirong.) [3] | Cao, Zixiu (Cao, Zixiu.) [4] | Wang, Weiyu (Wang, Weiyu.) [5] | Feng, Xinxin (Feng, Xinxin.) [6] | Deng, Hui (Deng, Hui.) [7] (Scholars:邓辉) | Zhang, Caixia (Zhang, Caixia.) [8] (Scholars:张彩霞) | Zheng, Qiao (Zheng, Qiao.) [9] (Scholars:郑巧) | Wu, Jionghua (Wu, Jionghua.) [10] (Scholars:吴炯桦) | Zhang, Yi (Zhang, Yi.) [11] | Cheng, Shuying (Cheng, Shuying.) [12] (Scholars:程树英)

Indexed by:

Scopus SCIE

Abstract:

Antimony selenosulfide (Sb-2(S,Se)(3)) solar cells have achieved an efficiency of over 10.0%. However, the uncontrollable hydrothermal process makes preparing high-quality Sb-2(S,Se)(3) thin films a bottleneck for efficient Sb-2(S,Se)(3) solar cell. To address this problem, triethanolamine (TEA) additive is innovatively utilized to regulate the reaction kinetic process of Sb-2(S,Se)(3) thin films in this work. The results show that TEA chelator can realize the time-domain control of the reaction process, optimizing the Se/(S+Se) elemental distribution of Sb-2(S,Se)(3) thin film and shrinking the bandgap offset of Sb-2(S,Se)(3) thin film. Meanwhile, the (021) and (061) crystal orientation of Sb-2(S,Se)(3) thin film are enhanced and the harmful V-Se1 defects in Sb-2(S,Se)(3) solar cells are passivated. Interestingly, a uniform back surface gradient for Sb-2(S,Se)(3) thin film is formed to reduce the minority carrier recombination at the back contact, increase the photocurrent and decrease the diode current of Sb-2(S,Se)(3) solar cells. Finally, the J(sc) and FF of Sb-2(S,Se)(3) solar cells are significantly improved by 8.6% and 5.5% respectively, and the open-circuit voltage deficit of the device is reduced by 44 mV, which leads to an efficiency of 9.94% which is the highest values of Sb-2(S,Se)(3) solar cells by sodium selenosulfate system.

Keyword:

additive hydrothermal deposition reaction kinetic Sb-2(S, Se)(3) solar cells sodium selenosulfate

Community:

  • [ 1 ] [Zhu, Qiqiang]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 2 ] [Wang, Weihuang]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 3 ] [Chen, Zhirong]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 4 ] [Wang, Weiyu]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 5 ] [Feng, Xinxin]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 6 ] [Deng, Hui]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 7 ] [Zhang, Caixia]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 8 ] [Zheng, Qiao]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 9 ] [Wu, Jionghua]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 10 ] [Cheng, Shuying]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 11 ] [Wang, Weihuang]Jiangsu Collaborat Innovat Ctr Photovolta Sci & En, Changzhou 213164, Peoples R China
  • [ 12 ] [Deng, Hui]Jiangsu Collaborat Innovat Ctr Photovolta Sci & En, Changzhou 213164, Peoples R China
  • [ 13 ] [Zhang, Caixia]Jiangsu Collaborat Innovat Ctr Photovolta Sci & En, Changzhou 213164, Peoples R China
  • [ 14 ] [Zheng, Qiao]Jiangsu Collaborat Innovat Ctr Photovolta Sci & En, Changzhou 213164, Peoples R China
  • [ 15 ] [Wu, Jionghua]Jiangsu Collaborat Innovat Ctr Photovolta Sci & En, Changzhou 213164, Peoples R China
  • [ 16 ] [Cheng, Shuying]Jiangsu Collaborat Innovat Ctr Photovolta Sci & En, Changzhou 213164, Peoples R China
  • [ 17 ] [Cao, Zixiu]Nankai Univ, Inst Photoelect Thin Film Devices & Technol, Tianjin 300350, Peoples R China
  • [ 18 ] [Zhang, Yi]Nankai Univ, Inst Photoelect Thin Film Devices & Technol, Tianjin 300350, Peoples R China
  • [ 19 ] [Cao, Zixiu]Nankai Univ, Tianjin Key Lab Thin Film Devices & Technol, Tianjin 300350, Peoples R China
  • [ 20 ] [Zhang, Yi]Nankai Univ, Tianjin Key Lab Thin Film Devices & Technol, Tianjin 300350, Peoples R China

Reprint 's Address:

  • 王伟煌 程树英

    [Wang, Weihuang]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China;;[Cheng, Shuying]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China;;[Wang, Weihuang]Jiangsu Collaborat Innovat Ctr Photovolta Sci & En, Changzhou 213164, Peoples R China;;[Cheng, Shuying]Jiangsu Collaborat Innovat Ctr Photovolta Sci & En, Changzhou 213164, Peoples R China;;[Zhang, Yi]Nankai Univ, Inst Photoelect Thin Film Devices & Technol, Tianjin 300350, Peoples R China

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ISSN: 1613-6810

Year: 2024

1 3 . 0 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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