Micro-Light　Emitting　Diodes　(Micro-LEDs)　are　key　components　in　the　field　of　next-generation　display　technologies.　In　the　process　of　making　Micro-LED　displays,　millions　of　chips　need　to　be　transferred　to　the　driver　substrate　using　mass　transfer　technology.　Conventional　transfer　techniques,　such　as　stamp　transfer,　present　challenges　in　terms　of　processing　efficiency　and　applicability　due　to　the　need　for　pre-prepared　tethered　structures　and　fixed　chip　pitch.　To　overcome　these　limitations,　the　t　hin-film-assisted　laser　transfer　and　bonding　(TFA-LTAB)　technology　is　proposed.　This　technique　is　able　to　efficiently　and　accurately　transfer　Micro-LEDs　from　the　source　substrate　to　the　driver　substrate　with　arbitrary　pitch　through　thin-film　assistance,　and　electrically　connects　the　chips　through　flip-chip　bonding　technology,　which　significantly　improves　the　efficiency　and　reliability　of　the　transfer　and　joining.　The　TFA-LTAB　method　proposed　in　this　study　integrates　laser　transfer　and　flip-chip　bonding　techniques.　Through　the　TFA-LTAB　process,　these　Micro-LEDs　cultured　on　sapphire　substrates　are　precisely　assembled　onto　transparent　low-temperature　polycrystalline　silicon　thin-film　transistors　(LTPS-TFTs).　The　method　successfully　achieved　mass　transfer　and　bonding　of　Micro-LEDs　with　a　size　of　30　x　15　mu　m2　at　low　temperature　(180　degrees　C)　and　low　pressure　(0.08　MPa).