With　the　rapid　advancement　of　display　and　smart　lighting　technologies,　micro-light-emitting　diodes　(MicroLEDs)　have　garnered　substantial　attention　due　to　their　exceptional　performance　characteristics.　However,　a　significant　challenge　persists　in　achieving　reliable　interconnections　between　Micro-LED　chips　and　driver　backplanes.　This　article　proposes　and　implements　the　Double-Layer　Photoresist　Structure　Electroplating　(DPSE)　technique　for　fabricating　Cu-SnAg　metal　bumps,　thereby　facilitating　the　heterogeneous　integration　of　oxide　thin　film　transistors　(TFTs)　with　GaN-based　blue　LEDs.　The　DPSE　process　was　optimized　by　addressing　several　critical　factors,　including　the　correlation　between　bump　height　and　electroplating　time,　the　occurrence　of　cracks　in　the　photoresist　surface,　and　the　removal　of　the　conductive　layer.　Metal　bumps　were　successfully　fabricated　on　TFT　backplanes　with　dimensions　of　16.5　mu　m　x　10　mu　m,　an　average　height　of　5.39　mu　m,　and　a　uniformity　of　approximately　2.266　%.　To　demonstrate　the　efficacy　of　this　approach,　a　0.495-inch　blue　active-matrix　Micro-LED　display　was　designed　and　fabricated.　This　display　features　a　mesa　size　of　15　mu　m　x　30　mu　m,　a　pixel　pitch　of　222　mu　m,　and　a　pixel　density　of　114　pixels　per　inch　(PPI).　The　resultant　blue　Micro-LED　display　exhibits　excellent　optical　characteristics,　achieving　a　brightness　of　1625　cd/m2　(nits).　It　is　anticipated　that　the　methodology　and　findings　presented　in　this　study　will　contribute　significantly　to　the　advancement　of　Micro-LED　display　technology　in　consumer　electronics.　This　research　not　only　represents　a　significant　advancement　in　the　field　of　Micro-LED　display　technology　but　also　paves　the　way　for　future　innovations　in　high-resolution,　energy-efficient　display　systems.