This　study　presents　a　metal-semiconductor-metal　(MSM)　and　micro-light-emitting　diode　(mu　LED)　integrated　device　(MSM-mu　LED)　without　additional　epitaxial　growth,　which　demonstrates　excellent　performance　in　ultraviolet　(UV)　detection　and　optoelectronic　modulation.　By　employing　an　approach　that　combines　vertical　and　lateral　integration,　the　rapid　response　characteristic　of　the　MSM　is　utilized　to　control　the　current　required　to　activate　the　mu　LED,　thereby　enhancing　the　LED＇s　luminous　efficiency.　The　MSM-mu　LED　device　was　simulated　using　Silvaco　TCAD　software,　by　optimizing　the　device　structure　parameters,　such　as　doping　concentration,　material　thickness,　and　electrode　length,　and　adjusting　the　wavelength　and　intensity　of　ultraviolet　light,　the　photocurrent　value　was　enhanced　to　be　approximately　6　orders　of　magnitude　higher　than　the　dark　current,　successfully　achieving　microampere-level　currents　to　illuminate　the　mu　LED.　Under　irradiation　at　365　nm　wavelength,　the　device　exhibited　maximum　photocurrent.　Experimental　validation　confirmed　that　MSM-mu　LED　exhibited　significant　photocurrent　enhancement　under　UV　illumination,　indicating　its　promising　potential　for　high-performance　applications　in　environmental　monitoring,　high-speed　optical　communication,　and　biomedical　imaging.