• Complex
  • Title
  • Keyword
  • Abstract
  • Scholars
  • Journal
  • ISSN
  • Conference
成果搜索

author:

Chen, T. (Chen, T..) [1] | Yu, K. (Yu, K..) [2] | Hu, H. (Hu, H..) [3] | Li, Y. (Li, Y..) [4] | Huang, W. (Huang, W..) [5] | Li, R. (Li, R..) [6] | Qie, Y. (Qie, Y..) [7] | Lin, H. (Lin, H..) [8] | Guo, T. (Guo, T..) [9] | Li, F. (Li, F..) [10]

Indexed by:

Scopus

Abstract:

Zinc oxide nanoparticles (NPs) are currently indispensable electron transport layer (ETL) materials in achieving high-performance quantum dot (QD) light-emitting diodes (QLEDs). However, due to the high conductivity and pervasive surface defects of ZnO NPs, excessive electron injection and exciton quenching at the QD/ETL interface restrain the practical applications of QLEDs. Here, an ionic liquid additive is introduced to construct a hybrid ETL with ZnO NPs. Ionic liquids tend to anchor at the defective sites of ZnO NPs due to electrostatic interactions and hydrogen bonding. This modification improves the surface properties of QDs, optimizing the interface between QDs and ETL, which in turn decreases the probability of nonradiative recombination. Additionally, the additives modulate the energy band structure of ZnO NPs, resulting in a higher barrier at the ETL/cathode interface to decrease the level of electron injection. The resultant QLEDs achieve a high maximum external quantum efficiency (EQE) of 26.71% and a long lifetime (T95@1000 cd m-2) of 5140 h. This straightforward approach offers a viable way to fabricate high-efficiency and long operation-lifetime QLEDs. © 2025 American Chemical Society.

Keyword:

charge balance defect passivation electron transport layers (ETL) ionic liquid QD light-emitting diodes

Community:

  • [ 1 ] [Chen T.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 2 ] [Yu K.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 3 ] [Hu H.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 4 ] [Hu H.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 5 ] [Li Y.]Huaying Technology (Group) Co., Ltd, Fuzhou, 350015, China
  • [ 6 ] [Huang W.]Huaying Technology (Group) Co., Ltd, Fuzhou, 350015, China
  • [ 7 ] [Li R.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 8 ] [Qie Y.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 9 ] [Lin H.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 10 ] [Guo T.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 11 ] [Guo T.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 12 ] [Li F.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 13 ] [Li F.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China

Reprint 's Address:

Email:

Show more details

Related Keywords:

Source :

ACS Applied Nano Materials

ISSN: 2574-0970

Year: 2025

Issue: 9

Volume: 8

Page: 4573-4579

5 . 3 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

Affiliated Colleges:

Online/Total:397/10024172
Address:FZU Library(No.2 Xuyuan Road, Fuzhou, Fujian, PRC Post Code:350116) Contact Us:0591-22865326
Copyright:FZU Library Technical Support:Beijing Aegean Software Co., Ltd. 闽ICP备05005463号-1