• Complex
  • Title
  • Keyword
  • Abstract
  • Scholars
  • Journal
  • ISSN
  • Conference
成果搜索

author:

Chen, Tao (Chen, Tao.) [1] | Yu, Kuibao (Yu, Kuibao.) [2] | Hu, Hailong (Hu, Hailong.) [3] | Li, Yuanhang (Li, Yuanhang.) [4] | Huang, Wenjuan (Huang, Wenjuan.) [5] | Li, Renjie (Li, Renjie.) [6] | Qie, Yuan (Qie, Yuan.) [7] | Lin, Haiyan (Lin, Haiyan.) [8] | Guo, Tailiang (Guo, Tailiang.) [9] | Li, Fushan (Li, Fushan.) [10]

Indexed by:

EI Scopus SCIE

Abstract:

Zinc oxide nanoparticles (NPs) are currently indispensable electron transport layer (ETL) materials in achieving high-performance quantum dot (QD) light-emitting diodes (QLEDs). However, due to the high conductivity and pervasive surface defects of ZnO NPs, excessive electron injection and exciton quenching at the QD/ETL interface restrain the practical applications of QLEDs. Here, an ionic liquid additive is introduced to construct a hybrid ETL with ZnO NPs. Ionic liquids tend to anchor at the defective sites of ZnO NPs due to electrostatic interactions and hydrogen bonding. This modification improves the surface properties of QDs, optimizing the interface between QDs and ETL, which in turn decreases the probability of nonradiative recombination. Additionally, the additives modulate the energy band structure of ZnO NPs, resulting in a higher barrier at the ETL/cathode interface to decrease the level of electron injection. The resultant QLEDs achieve a high maximum external quantum efficiency (EQE) of 26.71% and a long lifetime (T 95@1000 cd m-2) of 5140 h. This straightforward approach offers a viable way to fabricate high-efficiency and long operation-lifetime QLEDs.

Keyword:

charge balance defectpassivation electron transport layers(ETL) ionic liquid QD light-emitting diodes

Community:

  • [ 1 ] [Chen, Tao]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 2 ] [Yu, Kuibao]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 3 ] [Hu, Hailong]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 4 ] [Li, Renjie]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 5 ] [Qie, Yuan]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 6 ] [Lin, Haiyan]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 7 ] [Guo, Tailiang]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 8 ] [Li, Fushan]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 9 ] [Li, Yuanhang]Huaying Technol Grp Co Ltd, Fuzhou 350015, Peoples R China
  • [ 10 ] [Huang, Wenjuan]Huaying Technol Grp Co Ltd, Fuzhou 350015, Peoples R China
  • [ 11 ] [Hu, Hailong]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 12 ] [Guo, Tailiang]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 13 ] [Li, Fushan]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China

Reprint 's Address:

  • [Hu, Hailong]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China;;[Li, Fushan]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China;;[Hu, Hailong]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China;;[Li, Fushan]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China

Show more details

Related Keywords:

Source :

ACS APPLIED NANO MATERIALS

Year: 2025

Issue: 9

Volume: 8

Page: 4573-4579

5 . 3 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

Online/Total:160/10019213
Address:FZU Library(No.2 Xuyuan Road, Fuzhou, Fujian, PRC Post Code:350116) Contact Us:0591-22865326
Copyright:FZU Library Technical Support:Beijing Aegean Software Co., Ltd. 闽ICP备05005463号-1