We　report　here　high-efficiency,　high-resolution　quantum　dot　(QD)　light-emitting　diodes　patterned　by　ultraviolet-induced　ligand　exchange.　A　ligand　passivation　strategy　is　carried　out　to　remove　the　surface　defects　of　QDs　after　patterning,　and　thus　the　device　efficiency　shows　more　than　3-fold　increase.　Moreover,　in　order　to　reduce　the　leakage　current　occurring　in　the　non-luminance　area　between　QD　arrays,　a　polymethyl　methacrylate　film　is　inserted　as　a　charge　barrier　layer　to　separate　the　hole-　and　electron-transport　layers　from　direct　contact.　As　a　result,　the　leakage　current　of　the　devices　is　effectively　decreased.　By　optimizing　the　ligand　passivation　and　synergistically　suppressing　the　leakage　current,　the　device　with　5-mu　m　diameter　QD　arrays　exhibits　luminance　over　125000　cd/m(2)　and　maximum　external　quantum　efficiency　of　10.5%.　This　work　provides　a　feasible　way　to　achieving　high　resolution,　high-performance　quantum　dot　light-emitting　diodes　for　next-generation　display　applications.