Micro　light-emitting　diode　(Micro-LED)　is　widely　regarded　as　a　highly　promising　technology　in　the　current　display　field　due　to　its　excellent　performance,　but　the　core　issue　hindering　the　further　development　of　Micro-LED　is　how　to　achieve　high-precision　and　high-yield　transfer.　In　this　study,　laser-induced　forward　transfer　(LIFT)　is　adopted　as　the　main　technique,　and　a　novel　blister-type　dynamic　release　layer　(DRL)　material　is　selected,　characterized　by　a　gentle　transfer　process　and　minimal　residue　on　the　chip　after　transfer.　Chip-on-wafer　(COW)　is　a　structure　that　fabricates　a　large　number　of　Micro-LEDs　(15　x　30　mu　m2)　on　a　sapphire　substrate.　The　COW-on-head　(COH)　chip　bonding　method　can　control　the　uniformity　of　the　overall　chip　height　before　transfer　within　3.5%,　which　is　favorable　for　subsequent　stable　transfer.　Based　on　the　analysis　of　the　close　relationship　between　the　transfer　gap　and　laser　energy　density,　this　study　successfully　achieved　the　transfer　of　red/green/blue　(R/G/B)　Micro-LED　chips　(6400,　respectively)　onto　the　corresponding　chip-on-carrier　2　(COC-2),　and　all　of　them　have　achieved　a　one-step　transfer　yield　of　over　99.3%　and　an　average　chip　transfer　offset　of　2　mu　m　or　less.　It　is　worth　mentioning　that　the　one-step　transfer　yield　mentioned　in　this　paper　is　different　from　the　yield　after　testing　and　repairing　the　chips.　The　one-step　transfer　yield　can　fully　reflect　the　transfer　quality.　In　order　to　verify　the　validity　of　this　study,　a　1　in.,　full-color,　active　Micro-LED　display　with　a　pixel　size　of　114　pixels　per　inch　(PPI)　and　a　display　brightness　of　5598　cd/m2　was　successfully　fabricated.　This　study　proposes　an　optimized　solution　for　Micro-LED　transfer　technology,　which　will　help　accelerate　the　mass　production　and　marketization　of　Micro-LED.