Micro　light-emitting　diode　(Micro-LED)　is　considered　as　an　ideal　candidate　for　near-eye,　outdoor　display,　and　light　field　photography　applications.　At　present,　the　commercialization　of　full-color　Micro-LED　is　limited　by　the　mass　transfer　of　red,　green,　and　blue　(R-B-G)　sub-pixels.　Hence,　we　proposed　a　full-color　scheme　of　vertically　stacked　tricolor　Micro-LED　layers　to　avoid　mass　transfer,　which　owns　over　1000　PPI　(pixel　per　inch).　In　this　solution,　the　sidewall-insulated　via　in　the　epilayer　plays　a　critical　role　to　achieve　the　electrical　and　mechanical　integration　of　three　monochromatic　Micro-LEDs　with　Si-based　complementary　metal-oxide　semiconductor　(CMOS)　driver.　Therefore,　the　via　processes　of　GaN-based　epilayer　were　investigated　systematically　using　available　semiconductor　processes　in　this　article.　The　inductively　coupled　plasma　(ICP)　etching　was　employed　to　create　the　ultra-small　micro-structure　array　using　SiO2　thin　film　as　hard　mask.　Sidewall-insulated　vias　were　fabricated　with　different　aperture　sizes　(9.3,　7.5,　and　3.4　mu　m)　and　a　depth　of　about　4-mu　m.　The　vias　with　large　aspect　ratio　are　completely　satisfy　the　requirement　of　designed　vertical　interconnection.　This　study　aims　to　provide　valuable　reference　for　the　commercial　progress　of　high-resolution　and　full-color　Micro-LEDs.