The　precise　control　of　acceptor　doping　concentrations　in　epilayers　is　critical　for　fabricating　key　β-Ga2O3-based　power　electronic　structures,　including　current-blocking　layers,　p-type　epilayers,　and　drift　layers.　Unintentional　nitrogen　(N)　compensating　dopants　introduced　by　N2O　(a　common　oxygen　precursor)　during　β-Ga2O3　metalorganic　chemical　vapor　deposition　growth　significantly　affects　electrical　properties.　This　study　demonstrates　that　N　concentration　in　epilayers　is　largely　determined　by　growth　temperature　and　surface　adsorption　efficiency.　As　the　epitaxial　temperature　increases,　the　N　doping　concentration　in　the　epilayer　decreases.　When　the　epitaxial　temperature　exceeds　1000　°C,　the　efficiency　of　N　adsorption　on　β-Ga2O3　surfaces　is　influenced　by　both　epitaxial　parameters　and　substrate　orientation.　Modifying　epitaxial　parameters,　especially　by　increasing　chamber　pressure,　enhances　the　N　concentration　in　β-Ga2O3　epilayers.　Stronger　N　adsorption　occurs　on　the　(100)-plane　compared　to　the　(001)-plane　epilayer;　however,　the　(001)-plane　epilayer　allows　better　N　concentration　tuning　through　adjustments　in　parameters.　First-principles　calculations　indicate　that　such　observed　differences　in　adsorption　efficiency　are　attributable　to　variations　in　adsorption　energies　specific　to　each　plane,　coupled　with　competitive　interactions　between　nitrogen　(N)　and　oxygen　(O)　atoms　during　surface　reactions.　This　study　offers　fundamental　insights　that　advance　the　engineering　of　β-Ga2O3　homoepilayers　for　power　electronics　applications.　©　2025　Author(s).