As　an　emerging　driving　mode　based　on　the　principle　of　electrostatic　induction,　the　noncarrier　injection　(NCI)　mode　is　expected　to　propel　micro/nano-based　light-emitting　display　technology　toward　a　future　that　is　more　immersive,　intelligent,　and　integrated.　However,　the　further　improvement　of　electroluminescence　efficiency　is　a　problem　to　be　solved　urgently　at　present　for　the　nanoscale　light-emitting　diode　(nLED)　operating　in　NCI　mode.　In　this　work,　the　avalanche　multiplication　effect　in　the　NCI-nLED　is　investigated　through　finite　element　simulations.　The　carriers　generated　by　the　avalanche　effect　play　a　key　role　in　enhancing　the　performance　of　NCI-nLED　is　revealed.　The　dynamic　variation　of　carrier　concentration　and　the　energy　band　is　studied　to　analyze　the　generation　process　of　the　avalanche　effect　and　the　mechanism　of　noncarrier　electroluminescence　enhancement.　Importantly,　we　propose　a　potentially　ultra-simple　symmetrical　structure　characterized　by　two　single-quantum　wells　(QWs)　avalanche　junctions,　where　a　single-QW　functions　as　both　the　avalanche　layer　and　the　luminescence　layer.　It　is　demonstrated　that　the　electroluminescence　intensity　of　this　structure　can　be　increased　to　14.19　times　compared　with　that　of　original　structure.　The　simulation　work　advances　the　theoretical　model　for　understanding　the　NCI　mode　and　opens　a　new　perspective　for　the　application　expansion　of　display　technology.　©　2025　Elsevier　Ltd