Antimony　sulfide　(Sb2S3)　thin　film　have　a　suitable　band　gap　(1.73　eV)　and　high　absorption　coefficient,　indicating　potential　prospects　in　indoor　photovoltaics.　The　open-circuit　voltage　(VOC)　attenuation　under　indoor　weak　light　limits　the　performance　and　application,　which　is　affected　by　the　heterojunction　interface　quality.　Hence,　we　propose　a　hole　transport　layer　free　Sb2S3　indoor　photovoltaic　cell　using　Li-doped　TiO2　as　the　electron　transport　layer　to　overcome　weak-light　VOC　loss.　The　Li-doped　TiO2　films　prepared　by　spray　pyrolysis　LiCl　additive　precursor　reveal　higher　surface　potentials,　enhancing　electron　collections.　The　doped　interface　also　promoted　subsequent　grain　growth　of　Sb2S3　thin　film.　The　champion　device,　configured　as　FTO/TiO2:Li/Sb2S3/Au,　achieves　an　efficiency　of　6.12%　with　an　optimal　Li　doping　ratio　of　8%　in　the　TiO2　layer.　The　Li　introduction　at　the　junction　interface　suppresses　the　photocarrier　recombinations　under　indoor　light,　thus　improving　device　performance.　The　indoor　power　conversion　efficiency　of　the　Li-TiO2　based　Sb2S3　device　reaches　12.7%　under　the　irradiation　of　1000-lux　LED,　showing　48%　improvement　compared　with　the　undoped　device.　The　Li-doped　TiO2/Sb2S3　photovoltaic　device　demonstrates　significant　advantages,　particularly　in　cold　and　monochromatic　light　conditions,　opening　new　prospects　for　indoor　application.