Zinc　oxide　(ZnO)　nanoparticles　(NPs)　are　extensively　adopted　material　to　be　used　as　efficient　electron　transport　layer　(ETL)　in　quantum　dot　light　emitting　diodes　(QLEDs)　due　to　their　suitable　properties　of　high　electron　mobility,　good　stability,　and　easy　processability.　However,　because　of　the　naturally　high　work　function　of　ZnO　NPs,　the　electrons　can　be　spontaneously　transferred　at　the　quantum　dot/ZnO　interface.　In　addition,　the　enormous　difference　in　electron　and　hole　mobility　can　lead　to　interfacial　exciton　quenching　and　unbalanced　charge　injection.　In　this　paper,　the　strategy　of　replacing　the　ZnO　in　QLEDs　with　Mg　and　polyvinylpyrrolidone　(PVP)　inorganic-organic　hybrid　co-doped　ZnO　NPs　are　introduced.　The　energy　band　structures　of　ZnO　NPs　are　tailored　by　tuning　the　concentrations　of　Mg,　resulting　in　a　significant　suppression　of　the　spontaneous　charge　transfer　at　the　quantum　dot/ETL　interface.　Furthermore,　the　surface　quenching　sites　and　the　electronic　mobility　of　ETL　were　adjusted　via　PVP　doping.　The　proposed　method　significantly　enhances　the　current　efficiency　and　external　quantum　efficiency　to　16.16　cd/A　and　15.45%,　respectively,　an　improvement　of　about　2.5-fold　compared　to　the　devices　with　pure　ZnO　NPs.