Bulk-quantity synthesis of ultralong SnO2 nanowires and their application to a backgated triode emission device - Details

author：

Ma, L. A. (Ma, L. A..) ^[1] | Lin, J. Y. (Lin, J. Y..) ^[2] | Hu, L. Q. (Hu, L. Q..) ^[3] | Ye, Y. (Ye, Y..) ^[4] (Scholars：叶芸) | Guo, T. L. (Guo, T. L..) ^[5] (Scholars：郭太良)

Indexed by：

CPCI-S EI Scopus

Abstract：

A　high　yield　of　ultralong　SnO2　nanowires　is　successfully　achieved　by　a　simple　thermal　evaporation　of　SnO　powders　under　air　ambient.　The　as-synthesized　SnO2　nanobelts　are　single　crystals　with　rutile　structure.　A　backgated　triode　device　for　high-current　applications　has　been　developed　with　beltlike　SnO2　field　emitters.　The　devices　have　confirmed　triode　operation　with　low　turn-on　gate　voltage　(about　170　V)　and　stable　electron　emission　with　brightness　of　30　cd/m(2).

Keyword：

Crystal growth Field emission Nanobelts Tin oxide

Community：

[ 1 ] [Ma, L. A.]Fujian Univ Technol, Dept Mat Sci & Engn, Fuzhou, Peoples R China
[ 2 ] [Lin, J. Y.]Fujian Univ Technol, Dept Mat Sci & Engn, Fuzhou, Peoples R China
[ 3 ] [Lin, J. Y.]Fuzhou Univ, Inst Optoelect & Displays Technol, Fuzhou, Peoples R China
[ 4 ] [Hu, L. Q.]Fuzhou Univ, Inst Optoelect & Displays Technol, Fuzhou, Peoples R China
[ 5 ] [Ye, Y.]Fuzhou Univ, Inst Optoelect & Displays Technol, Fuzhou, Peoples R China
[ 6 ] [Guo, T. L.]Fuzhou Univ, Inst Optoelect & Displays Technol, Fuzhou, Peoples R China