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author:

Guo, Tai-Liang (Guo, Tai-Liang.) [1] (Scholars:郭太良) | Ma, Li-An (Ma, Li-An.) [2] | Lin, Zhi-Xian (Lin, Zhi-Xian.) [3] | Ye, Yun (Ye, Yun.) [4] (Scholars:叶芸)

Indexed by:

CPCI-S EI Scopus

Abstract:

In this paper we report the fabrication and testing of backgated triode structure field emission (FED) devices with SnO2-nanowires-based cathodes. Field-emission measurement reveals that the SnO2-nanowires FED devices posses a good emission property with low turn-on voltage (similar to 150 V), high emission current (similar to 390 mu A) and long-term emission stability.

Keyword:

Crystal growth Field emission Tin oxide

Community:

  • [ 1 ] [Guo, Tai-Liang]Fuzhou Univ, Inst Optoelect & Displays Technol, Fuzhou 350002, Peoples R China
  • [ 2 ] [Ma, Li-An]Fuzhou Univ, Inst Optoelect & Displays Technol, Fuzhou 350002, Peoples R China
  • [ 3 ] [Lin, Zhi-Xian]Fuzhou Univ, Inst Optoelect & Displays Technol, Fuzhou 350002, Peoples R China
  • [ 4 ] [Ye, Yun]Fuzhou Univ, Inst Optoelect & Displays Technol, Fuzhou 350002, Peoples R China

Reprint 's Address:

  • 郭太良

    [Guo, Tai-Liang]Fuzhou Univ, Inst Optoelect & Displays Technol, Fuzhou 350002, Peoples R China

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Source :

2009 IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE

ISSN: 2378-377X

Year: 2009

Page: 84-86

Language: English

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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