Indexed by：
Abstract：
in this paper we report the fabrication and testing of backgated triode structure field emission (FED) devices with SnO2-nanowires-based cathodes. Field-emission measurement reveals that the SnO2-nanowires FED devices posses a good emission property with low turn-on voltage (~150 V), high emission current (~ 390 uA) and long-term emission stability. © 2009 IEEE.
Keyword：
Reprint 's Address：
Email：
Source ：
Year： 2009
Page： 84-86
Language： English
Cited Count：
SCOPUS Cited Count：
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 0
Affiliated Colleges：
