The　quantum　dot　(QD)　color-conversion　efficiency　(CCE)　in　GaN　micro-light-emitting　diodes　(mu　LEDs)　is　greatly　improved　by　non-radiative　energy　transfer　(NRET)　mechanism.　An　array　of　deep　nano-holes　with　a　diameter　of　about　1　mu　m　was　fabricated　in　mu　LED　mesas　(40　x　60　mu　m(2))　by　nanoimprint　lithography.　The　nano-holes　were　etched　straight　through　the　mu　LED　active　region　to　ensure　that　the　filled　QDs　were　in　extremely　close　contact　with　the　active　region.　The　absorption　efficiency　and　emission　efficiency　of　QDs　are　effectively　improved　by　NRET,　resulting　in　a　super-high　CCE　in　QD-mu　LED　hybrid　devices.　Compared　to　mu　LED　devices　with　conventional　spin-coated　QDs,　the　CCE　of　novel　nano-hole　mu　LEDs　with　filled　QDs　has　been　enhanced　by　about　118%.