Despite　the　great　progress　has　been　made　on　device　parameters　and　working　mechanism　of　perovskite-based　memristors,　thermal　instability　under　extreme　conditions　limits　their　performance,　and　thermal　effect　on　their　resistive　switching　(RS)　characteristics　remains　unclear.　Herein,　from　the　viewpoint　of　organic/inorganic　interfacial　interaction　in　a　novel　2D　-oriented　perovskite　[(TZ-H)(2)(PbBr4)](n)　(TZ　=　1H-1,2,4-triazole),　thermal　effect　on　the　RS　performance　of　perovskite-based　memristor　is　investigated.　This　FTO/[(TZ-H)(2)(PbBr4)](n)/Ag　memristor　can　exhibit　high　thermal　tolerance　with　a　working　temperature　of　170　degrees　C,　and　the　best　RS　characteristics　can　be　achieved　at　140　degrees　C.　Mechanistic　studies　are　executed　based　on　X-ray　single　structural　analysis,　powder　X-ray　diffraction,　UV-Vis,　and　fluorescence.　Before　the　occurrence　of　phase　change　below　140　degrees　C　(alpha-phase),　anisotropic　lattice　expansion　illustrated　by　the　weaker　inter-layer　N-H　center　dot　center　dot　center　dot　Br　hydrogen　bond,　longer　layer-layer　distances,　more　distorted　PbBr6　octrahedra,　larger　optical　gap,　and　quenched　fluorescence　can　be　beneficial　for　the　trap-filled　limited　process.　After　phase　transformation　into　beta-phase,　the　breakage　of　layer-layer　interaction　and　looser　layer-layer　packing　will　inhibit　the　halogen　migration,　resulting　in　more　space　charge　limited　conduction　characters.　The　unique　thermal　enhanced　RS　performance　with　status　monitored　by　fluorescent　chromism　can　provide　a　new　paradigm　for　the　development　of　new　memristors　with　highly　environmental　tolerance.