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author:

Deng, Liying (Deng, Liying.) [1] | Li, Wangyang (Li, Wangyang.) [2] | Sun, Jie (Sun, Jie.) [3] (Scholars:孙捷) | Wang, Xinghui (Wang, Xinghui.) [4] (Scholars:王星辉) | Zhang, Qing (Zhang, Qing.) [5] | Lin, Chang (Lin, Chang.) [6] | Pan, Kui (Pan, Kui.) [7] | Yan, Qun (Yan, Qun.) [8] | Cheng, Shuying (Cheng, Shuying.) [9] (Scholars:程树英)

Indexed by:

EI Scopus SCIE

Abstract:

Everyone familiar with two-dimensional (2D) materials is aware of fluorophlogopite mica (FM), which has an atomic-level flat surface that provides an ideal platform for the growth of 2D materials. Since it has been demonstrated that the alkali metal ions (AMI) can aid in the growth of large-sized 2D materials by chemical vapor deposition (CVD) in recent years, it became a major mystery whether FM which contains AMI benefits from them in the preparation of 2D materials by CVD, too. In this article, we dispelled this ambiguity and discovered that temperature is the key for FM as an AMI source to boost the growth of large-sized 2D materials. We carried out variable temperature experiments and found that FM can indeed be incorporated into the growth of large-sized 2D materials as an AMI source at high temperatures and successfully obtained the highly crystalline MoO2 with a larger size compared to those without FM. This finding is of great importance to the understanding of the growth mechanism of FM for 2D materials by CVD and to better exploit its role in the growth of 2D materials.

Keyword:

2D materials Alkali metal ions Fluorophlogopite mica MoO2

Community:

  • [ 1 ] [Deng, Liying]Fuzhou Univ, Coll Phys & Informat Engn, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350100, Peoples R China
  • [ 2 ] [Sun, Jie]Fuzhou Univ, Coll Phys & Informat Engn, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350100, Peoples R China
  • [ 3 ] [Lin, Chang]Fuzhou Univ, Coll Phys & Informat Engn, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350100, Peoples R China
  • [ 4 ] [Pan, Kui]Fuzhou Univ, Coll Phys & Informat Engn, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350100, Peoples R China
  • [ 5 ] [Yan, Qun]Fuzhou Univ, Coll Phys & Informat Engn, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350100, Peoples R China
  • [ 6 ] [Sun, Jie]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 7 ] [Wang, Xinghui]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 8 ] [Lin, Chang]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 9 ] [Yan, Qun]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 10 ] [Cheng, Shuying]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 11 ] [Sun, Jie]Chalmers Univ Technol, Dept Microtechnol & Nanosci, Quantum Device Phys Lab, S-41296 Gothenburg, Sweden
  • [ 12 ] [Li, Wangyang]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 13 ] [Wang, Xinghui]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 14 ] [Cheng, Shuying]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 15 ] [Zhang, Qing]Natl Univ Singapore, Dept Chem, Singapore City 117543, Singapore

Reprint 's Address:

  • [Sun, Jie]Fuzhou Univ, Coll Phys & Informat Engn, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350100, Peoples R China;;[Sun, Jie]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China;;[Wang, Xinghui]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China;;[Sun, Jie]Chalmers Univ Technol, Dept Microtechnol & Nanosci, Quantum Device Phys Lab, S-41296 Gothenburg, Sweden;;[Wang, Xinghui]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China;;

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Source :

APPLIED SURFACE SCIENCE

ISSN: 0169-4332

Year: 2023

Volume: 612

6 . 3

JCR@2023

6 . 3 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:49

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 3

SCOPUS Cited Count: 2

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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