Random　Ag　nanowire　network　with　high　density　and　adaptive　properties　can　mimic　the　complex　network　topology　of　neurons　and　has　a　wide　range　of　applications　in　the　field　of　information　storage,　selectors,　and　neuromorphic　computing.　In　this　work,　Ag　nanowire　devices　are　prepared　on　a　patterned　electrode　substrate　by　a　spin-coating　process　to　investigate　the　impact　of　the　concentrations　and　diameters　of　Ag　nanowire　on　their　electrical　properties.　The　results　show　that　the　random　network　prepared　by　Ag　nanowires　with　diameter　of　30　nm　and　composite　solutions　with　concentrations　of　5　wt%　can　achieve　controllable　high　switching　resistance　behavior.　Furthermore,　the　resistive　behavior　with　large　switch　is　used　as　the　initialization　process　of　the　device　to　achieve　controllable　synaptic　plasticity　behavior,　which　can　respond　to　ultra-low　voltage.　Finally,　the　working　mechanism　of　random　Ag　nanowire　networks　under　different　electrical　stimulation　is　proposed　by　an　investigation　into　the　formation　and　rupture　process　of　Ag　nanofilaments　in　individual　nanojunctions.　This　work　provides　new　ideas　for　the　physical　realization　and　application　of　random　network　in　the　field　of　novel　neuromorphic　device.　©　2024　Chinese　Vacuum　Society.　All　rights　reserved.