Photosensitive　quantum　dot　light-emitting　diodes　(PSQLEDs)　possess　the　dual　capabilities　of　generating　and　detecting　light　signals,　which　is　of　significant　importance　for　the　development　of　miniaturized　and　integrated　optoelectronic　devices.　However,　the　state-of-the-art　PSQLEDs　can　only　detect　light　signals　within　a　certain　wavelength　range,　and　require　switching　between　the　two　functions　under　different　bias　voltage　directions.　In　this　work,　The　use　of　a　ZnO/quantum　dots　(QDs)/ZnO　multilayer　(ZQZ　ML)　architecture　as　both　the　electron　transport　layer　and　the　photosensitive　layer　is　pioneered.　The　QDs　in　this　structure　are　composed　of　narrow-bandgap　lead　sulfide　QDs　and　wide-bandgap　cadmium　selenide　QDs,　successfully　realizing　a　unique　PSQLED　device　with　C　photosensitive　characteristics.　As　a　result,　the　as-fabricated　device　can　respond　to　illumination　from　365　to　1300　nm,　and　the　device　achieves　a　photoresponse　rate　of　20.9　mA　W-1　in　self-powered　mode　to　UV　light.　After　UV　light　irradiation,　the　maximum　external　quantum　efficiency　and　maximum　luminance　of　device　reached　11.8%　and　64,549　cd　m-2,　respectively.　The　device　shows　a　record-high　luminance　ON/OFF　ratio　of　5500%,　which　is　beneficial　for　high　contrast　and　accurate　information　display.　A　quantum　dot　light-emitting　diode　(QLED)　is　developed　with　UV-vis-NIR　photosensitive　characteristics　based　on　a　ZnO/QDs/ZnO　multilayer　structure.　This　device　can　respond　to　UV　to　NIR　signals　in　self-powered　mode.　Additionally,　after　UV　light　irradiation,　the　device　achieves　a　maximum　external　quantum　efficiency　of　11.8%　and　a　luminance　of　64,549　cd　m-2,　with　a　record-high　luminance　ON/OFF　ratio　of　5500%.　image