Investigation of ultrasmall sidewall-insulated GaN via with large aspect ratio for the strategy of vertically stacked full-color Micro-LEDs - Details

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Abstract：

Micro　light-emitting　diode　(Micro-LED)　is　considered　as　an　ideal　candidate　for　near-eye,　outdoor　display,　and　light　field　photography　applications.　At　present,　the　commercialization　of　full-color　Micro-LED　is　limited　by　the　mass　transfer　of　red,　green,　and　blue　(R-B-G)　sub-pixels.　Hence,　we　proposed　a　full-color　scheme　of　vertically　stacked　tricolor　Micro-LED　layers　to　avoid　mass　transfer,　which　owns　over　1000　PPI　(pixel　per　inch).　In　this　solution,　the　sidewall-insulated　via　in　the　epilayer　plays　a　critical　role　to　achieve　the　electrical　and　mechanical　integration　of　three　monochromatic　Micro-LEDs　with　Si-based　complementary　metal-oxide　semiconductor　(CMOS)　driver.　Therefore,　the　via　processes　of　GaN-based　epilayer　were　investigated　systematically　using　available　semiconductor　processes　in　this　article.　The　inductively　coupled　plasma　(ICP)　etching　was　employed　to　create　the　ultra-small　micro-structure　array　using　SiO2　thin　film　as　hard　mask.　Sidewall-insulated　vias　were　fabricated　with　different　aperture　sizes　(9.3,　7.5,　and　3.4　μm)　and　a　depth　of　about　4-μm.　The　vias　with　large　aspect　ratio　are　completely　satisfy　the　requirement　of　designed　vertical　interconnection.　This　study　aims　to　provide　valuable　reference　for　the　commercial　progress　of　high-resolution　and　full-color　Micro-LEDs.　©　2024　Elsevier　B.V.

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ICP etching Micro-LED Sidewall-insulated GaN via Vertical interconnection

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[ 1 ] [Li Y.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350100, China
[ 2 ] [Li Y.]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350100, China
[ 3 ] [Li Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
[ 4 ] [Zhang K.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350100, China
[ 5 ] [Zhang K.]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350100, China
[ 6 ] [Zhang K.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
[ 7 ] [Yang T.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350100, China
[ 8 ] [Yang T.]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350100, China
[ 9 ] [Yang T.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
[ 10 ] [Nie J.]TCL China Star Optoelectronics Technology Co., Ltd, Shenzhen, 518132, China
[ 11 ] [Li Q.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350100, China
[ 12 ] [Li Q.]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350100, China
[ 13 ] [Li Q.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
[ 14 ] [Zhou Y.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350100, China
[ 15 ] [Zhou Y.]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350100, China
[ 16 ] [Zhou Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
[ 17 ] [Tao T.]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering. Nanjing University, Nanjing, 210093, China
[ 18 ] [Zhi T.]College of Electronic and Optical Engineering & College of Flexible Electronics, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
[ 19 ] [Yan Q.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350100, China
[ 20 ] [Yan Q.]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350100, China
[ 21 ] [Yan Q.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
[ 22 ] [Sun J.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350100, China
[ 23 ] [Sun J.]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350100, China
[ 24 ] [Sun J.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China

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Source ：

Optics Communications

ISSN： 0030-4018

Year： 2025

Volume： 575

2 . 2 0 0

JCR@2023

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 2

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