Micro　light-emitting　diode　(Micro-LED)　displays　have　been　considered　promising　candidate　for　reaching　the　augmented/virtual　reality　(AR/VR)　display　technology.　However,　it＇s　challenging　to　attain　the　display　application　with　ultra-high　PPI　(pixel　per　inch)　and　larger　panel　size　in　virtue　of　the　difficulties　of　chip　fabrication　and　subsequent　bonding　process.　In　this　paper,　we　demonstrated　a　0.7-inch　active-matrix　(AM)　monolithic　blue　Micro-LED　display　integrated　with　silicon-based　complementary　metal　oxide　semiconductor　(CMOS)　driver　by　indium　bump　bonding.　The　display　features　a　full　high-definition　(FHD)　resolution　of　1920　x　1080,　a　pixel　pitch　of　8　mu　m,　and　a　PPI　of　3175.　Key　fabrication　processes　were　investigated　experimentally　including　self-alignment　etching　of　mesa,　elevation　of　the　cathode　to　match　the　anode　height,　and　preparation　of　uniform　Micro-bumps　array.　The　blue　Micro-LED　display　exhibits　excellent　electrical　and　optical　characteristic　with　a　low　forward　voltage　of　3.45　V.　Moreover,　a　3D　model　of　integrated　Micro-LED-CMOS　was　built　by　theoretical　simulation　and　the　finite　element　analysis　was　employed　to　evaluate　the　reliability　of　the　heterogeneous　integration.　Finally,　we　illustrated　the　great　prospect　of　the　fabricated　Micro-LED　as　the　light　engine　for　lightweight　AR　and　spatial　light　field　display.