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author:

Lu, Ganzhen (Lu, Ganzhen.) [1] | Yang, Zunxian (Yang, Zunxian.) [2] (Scholars:杨尊先) | Zheng, Kang (Zheng, Kang.) [3] | Lin, Shimin (Lin, Shimin.) [4] | Liu, Jiahui (Liu, Jiahui.) [5] | Ye, Bingqing (Ye, Bingqing.) [6] | Huang, Jianhua (Huang, Jianhua.) [7] | Zhang, Yufei (Zhang, Yufei.) [8] | Ye, Yuliang (Ye, Yuliang.) [9] | Guo, Tailiang (Guo, Tailiang.) [10] (Scholars:郭太良) | Chen, Gengxu (Chen, Gengxu.) [11] (Scholars:陈耿旭)

Indexed by:

EI Scopus SCIE

Abstract:

Quantum dots fluorescence-enhanced films, which mainly consisted of CdSe@ZnS quantum dots and noble metal nanoparticles or nanorods, were formed by layer-by-layer self-assembly techniques. This particular architecture consisting of metal nanoparticles-poly (diallyl dimethylammonium chloride) (PDDA)-QDs was characterized by those fabrication processes mainly including surface-modifying the oleic acid-capped CdSe@ZnS QDs (high quantum yield of similar to 89%) with mercaptopropionic acid (MPA) to be charged negatively (-COO-) for following solution-processed assembly, adjusting the size and coating the gold nanoparticles/nanorods with silica to form suitable dielectric insulation layer and further optimize the fluorescence-enhanced performance, as well as using the cationic polyelectrolyte to control the charges between layers and form opposite charges between two adjacent layers. After optimizing the structure of the quantum dot fluorescence-enhanced films and corresponding surface plasmon enhancement effect, the enhancement factor of 10.8 in Au NPs@SiO2-PDDA-QDs complex film and that of 24.7 in Au NRs@SiO2-PDDA-QDs complex film as compared with the pure quantum dot fluorescence film were achieved, respectively. This indicated that the Au NRs@SiO2-PDDA-QDs complex film was one of the most promising potentials for further display backlight and biometric identifier application.

Keyword:

Au@SiO2 microarchitecture CdSe@ZnS quantum dots Electrostatic self-assembly Metal surface plasmon enhancement Quantum dots fluorescence-enhanced films

Community:

  • [ 1 ] [Lu, Ganzhen]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350116, Peoples R China
  • [ 2 ] [Yang, Zunxian]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350116, Peoples R China
  • [ 3 ] [Zheng, Kang]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350116, Peoples R China
  • [ 4 ] [Lin, Shimin]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350116, Peoples R China
  • [ 5 ] [Liu, Jiahui]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350116, Peoples R China
  • [ 6 ] [Ye, Bingqing]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350116, Peoples R China
  • [ 7 ] [Huang, Jianhua]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350116, Peoples R China
  • [ 8 ] [Zhang, Yufei]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350116, Peoples R China
  • [ 9 ] [Ye, Yuliang]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350116, Peoples R China
  • [ 10 ] [Guo, Tailiang]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350116, Peoples R China
  • [ 11 ] [Chen, Gengxu]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350116, Peoples R China

Reprint 's Address:

  • 杨尊先 郭太良

    [Yang, Zunxian]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350116, Peoples R China;;[Guo, Tailiang]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350116, Peoples R China

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Source :

ORGANIC ELECTRONICS

ISSN: 1566-1199

Year: 2020

Volume: 77

2 . 7 0 0

JCR@2023

ESI Discipline: PHYSICS;

ESI HC Threshold:115

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 8

SCOPUS Cited Count: 10

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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