Organic　thin　film　transistor　(OTFT)　based　nonvolatile　memory　has　made　significant　progress　due　to　its　biocompatibility,　flexibility,　and　low　cost,　in　which　ferroelectric　transistor　memory　and　floating　gate　transistor　memory　play　the　main　roles　in　organic　nonvolatile　transistor　memory.　Here,　a　novel　layered　hybrid　structure　OTFT　nonvolatile　memory　is　invented　by　combining　ferroelectric　poly(vinylidene　fluoride-co-trifluoroethylene)　P(VDF-TrFE)　with　a　floating　gate　layer　utilizing　CdSe/ZnS　quantum　dots　(QDs),　which　integrates　the　advantages　of　ferroelectric　memory　and　floating　gate　memory.　The　core-shell　structured　CdSe/Zns　QDs　are　acted　as　robust　charge　trapping　centers　due　to　their　band　structure　similar　to　a　quantum　well,　preventing　the　back　diffuse　of　trapped　charges,　while　P(VDF-TrFE)　provides　additional　polarized　electric　field　to　modulate　the　capture　of　charge.　The　resultant　devices　exhibit　high　on-state　current　(approximate　to　10(-5)　A),　low　off-state　current　(approximate　to　10(-10)　A),　excellent　switch　ratio　(approximate　to　10(5)),　and　retention　characteristic　(＞10(4)　s).　Furthermore,　a　superior　memory　window,　more　than　85.6%　of　scanning　voltage　range,　higher　than　most　reported　organic　transistor　memories,　is　achieved,　which　endows　the　device　wide　operating　condition　and　significant　discrimination　between　on　and　off　state.　The　fine-structured　OTFT　memory　opens　up　a　unique　path　for　desirable　memory　to　meet　the　growing　demand　of　microelectronic　industry.