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author:

Zhang, Xu (Zhang, Xu.) [1] | Hu, Hailong (Hu, Hailong.) [2] (Scholars:胡海龙) | Qie, Yuan (Qie, Yuan.) [3] | Lin, Lihua (Lin, Lihua.) [4] (Scholars:林立华) | Guo, Tailiang (Guo, Tailiang.) [5] (Scholars:郭太良) | Li, Fushan (Li, Fushan.) [6] (Scholars:李福山)

Indexed by:

EI Scopus SCIE

Abstract:

With pixel miniaturization, the performance of high-resolution quantum dot light-emitting diodes (QLEDs) usually degrades. Considering the dimension of ultrasmall pixels, herein, a barrier architecture based on localized surface plasmon resonance (LSPR) that promotes the radiative recombination of neighboring quantum dots is rationally designed to improve the device performance. Au nanoparticles (NPs) are embedded in an insulating polymer to form a honeycomb-patterned barrier layer via the nanoimprint process. Each pixel fabricated in the void area (average diameter of 1.5 mu m) of the barrier layer is surrounded by a number of LSPR-NPs to enhance the luminescence. The resultant green QLEDs with a resolution of 9027 pixels per inch show a maximum external quantum efficiency of 11.1%, a 42.8% enhancement compared to the control device. Additionally, the lifetime of high-resolution QLEDs is obviously improved by the LSPR effect.

Keyword:

Au nanoparticles high-resolution light-emitting diodes localized surfaceplasmon resonance quantum dot

Community:

  • [ 1 ] [Zhang, Xu]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 2 ] [Hu, Hailong]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 3 ] [Qie, Yuan]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 4 ] [Lin, Lihua]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 5 ] [Guo, Tailiang]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 6 ] [Li, Fushan]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 7 ] [Hu, Hailong]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 8 ] [Lin, Lihua]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 9 ] [Guo, Tailiang]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 10 ] [Li, Fushan]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China

Reprint 's Address:

  • 胡海龙 李福山

    [Hu, Hailong]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China;;[Li, Fushan]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China;;[Hu, Hailong]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China;;[Li, Fushan]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China

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Source :

ACS APPLIED MATERIALS & INTERFACES

ISSN: 1944-8244

Year: 2024

Issue: 10

Volume: 16

Page: 13219-13224

8 . 5 0 0

JCR@2023

Cited Count:

WoS CC Cited Count: 1

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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