The　next-generation　computing　system　is　required　to　perform　10(18)　floating　point　operations　per　second　to　address　the　exponential　growth　of　data　from　sensory　terminals,　driven　by　advancements　in　artificial　intelligence　and　the　Internet　of　Things.　Even　if　a　supercomputer　possesses　the　capability　to　execute　these　operations,　managing　heat　dissipation　becomes　a　significant　challenge　when　the　electronic　synapse　array　reaches　a　comparable　scale　with　the　human　neuron　network.　One　potential　solution　to　address　thermal　hotspots　in　electronic　devices　is　the　use　of　vertically-aligned　hexagonal　boron　nitride　(h-BN)　known　for　its　high　thermal　conductivity.　In　this　study,　we　have　developed　textured　h-BN　films　using　the　high　power　impulse　magnetron　sputtering　technique.　The　thermal　conductivity　of　the　oriented　h-BN　film　is　approximately　354%　higher　than　that　of　the　randomly　oriented　counterpart.　By　fabricating　electronic　synapses　based　on　the　textured　h-BN　thin　film,　we　demonstrate　various　bio-synaptic　plasticity　in　this　device.　Our　results　indicate　that　orientation　engineering　can　effectively　enable　h-BN　to　function　as　a　suitable　self-heat　dissipation　layer,　thereby　paving　the　way　for　future　wearable　memory　devices,　solar　cells,　and　neuromorphic　devices.