In　this　Letter,　a　high-quality　and　high-resistivity　nitrogen　(N)-doped　Ga2O3　current　blocking　layer　(CBL)　is　grown　utilizing　metal-organic　chemical　vapor　deposition　homoepitaxial　technology.　By　using　nitrous　oxide　(N2O)　as　oxygen　source　for　Ga2O3　growth　and　N　source　for　doping　and　controlling　the　growth　temperature,　the　grown　CBL　can　effectively　achieve　high　(similar　to　10(19)　cm(-3))　or　low　(similar　to　10(17)　cm-3)　N　doping　concentrations,　as　well　as　high　crystal　quality.　Furthermore,　the　electrical　properties　of　the　developed　CBL　are　verified　at　the　device　level,　which　shows　that　the　device　using　the　CBL　can　withstand　bidirectional　voltages　exceeding　3.5　kV　with　very　low　leakage　(＜=　1　x　10(-4)　A/cm2).　This　work　can　pave　the　way　for　the　realization　of　high-voltage　and　low-leakage　Ga2O3　vertical　devices,　especially　metal-oxide-semiconductor　field　effect　transistors.