With　the　continuous　progress　in　the　manufacturing　process　of　gallium　nitride　(GaN)-based　light-emitting　diodes　(LEDs),　Micro-LED　display　is　considered　as　an　emerging　display　technology,　which　has　broad　prospects　for　near-eye　display,　large-scale　displays　device,　flexible　display,　and　other　fields.　The　inspection　of　wafer-level　Micro-LED　chips　can　improve　the　yield　of　the　screens　and　reduce　the　manufacturing　cost　of　displayers,　which　is　one　of　the　key　technologies　related　to　Micro-LED　display.　For　the　inspection　needs　of　large　quantity　(millions　of　orders)　and　small　size　(＜　50　mu　m)　of　wafer-level　Micro-LED　chip　arrays,　the　existing　electrical　inspection　technology　has　the　disadvantages　of　low　inspection　efficiency　and　high　cost.　Therefore,　Micro-LED　chips　inspection　technology　with　improving　inspection　efficiency,　improving　inspection　accuracy,　and　reducing　inspection　cost　is　the　future　development　trend.　In　this　paper,　several　indicators　required　for　Micro-LED　chip　inspection　are　summarized.　Then,　the　existing　or　proposed　inspection　methods　are　introduced　and　analyzed　in　detail.　Finally,　the　future　development　of　inspection　technology　is　prospected.