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author:

Wang, Kun (Wang, Kun.) [1] | Li, Wenhao (Li, Wenhao.) [2] | Chen, Rong (Chen, Rong.) [3] | Zhang, Yongai (Zhang, Yongai.) [4] (Scholars:张永爱) | Zhou, Xiongtu (Zhou, Xiongtu.) [5] (Scholars:周雄图) | Ye, Yun (Ye, Yun.) [6] (Scholars:叶芸) | Guo, Tailiang (Guo, Tailiang.) [7] (Scholars:郭太良) | Wu, Chaoxing (Wu, Chaoxing.) [8] (Scholars:吴朝兴)

Indexed by:

EI Scopus SCIE

Abstract:

High-density light-emitting diodes (LEDs) show great potential for next-generation micro-display technology due to their high resolution, long operational life, high brightness and high efficiency. However, conventional fabrication methods for high density LEDs suffer from issues such as growth difficulties, etch damage, and ion implantation damage. In this work, we propose an epitaxial slice damage-free process to fabricate an LED array with high density (2500 pixels per inch). To inhibit the potential electrical and optical crosstalk, the single-contact (SC) operation mode is employed. It is demonstrated that the SC-LEDs show frequency-selective luminescence characteristics. Moreover, crosstalk effect of the LEDs is significantly reduced compared to that operating in conventional DC mode. Finally, the mechanism of crosstalk suppression is revealed by finite element analysis. This work provides a promising approach for realizing high density LED array, offering valuable reference for further development in micro/nano-display technology.

Keyword:

alternating current crosstalk suppression High density light-emitting diodes single-contact mode

Community:

  • [ 1 ] [Wang, Kun]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 2 ] [Li, Wenhao]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 3 ] [Zhang, Yongai]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 4 ] [Zhou, Xiongtu]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 5 ] [Ye, Yun]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 6 ] [Guo, Tailiang]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 7 ] [Wu, Chaoxing]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 8 ] [Chen, Rong]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 9 ] [Zhang, Yongai]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 10 ] [Zhou, Xiongtu]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 11 ] [Ye, Yun]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 12 ] [Guo, Tailiang]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 13 ] [Wu, Chaoxing]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China

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Source :

IEEE ELECTRON DEVICE LETTERS

ISSN: 0741-3106

Year: 2023

Issue: 11

Volume: 44

Page: 1865-1868

4 . 1

JCR@2023

4 . 1 0 0

JCR@2023

JCR Journal Grade:2

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 5

SCOPUS Cited Count: 5

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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